PREPARATION OF ELECTRICAL INSULATING FILMS FOR HIGH-TEMPERATURE DEVICES BY ION-BEAM-ASSISTED PLASMA CVD

Ion beam assisted plasma chemical vapor deposition (CVD), which is a p lasma CVD combined with accelerated ion beams, was developed and appli ed to producing electrical insulating films for thin film sensors in o rder to improve electrical resistance at high temperature. Aluminum ox ide (Al2O3) films were prepared on nickel based superalloy (inconel 71 8) by ion beam assisted plasma CVD at the various incident angles of t he ion beams to a substrate. The crystal structure of these films was analyzed by X-ray diffraction. The electrical resistance of these film s was measured in the range of room temperature to 850 degrees C. The incident angle influenced the orientation of Al2O3 crystals. Al2O3 fil ms prepared by plasma CVD at the substrate temperature of 800 degrees C with simultaneous irradiation of Krypton ions (10 keV) at an angle f rom 40 degrees to 45 degrees indicated the highest electrical resistan ce. (C) 1998 Elsevier Science S.A. All rights reserved.