GROWTH OF PSEUDOMORPHIC SI1-YCY AND SI1-X-YGEXCY ALLOY LAYERS ON [100]SI BY ION-IMPLANTATION AND PULSED EXCIMER-LASER INDUCED EPITAXY

In this work, Si1-yCy and Si1-x-yGexCy alloy layers were grown by mult iple energy ion implantation of Ge and C into single crystal Si follow ed by pulsed excimer laser induced epitaxy. The properties of the allo y layers obtained by this technique, in terms of film crystallinity, G e and C redistribution and substitutional incorporation, strain format ion or relaxation and C-induced band-gap modification, were demonstrat ed to depend strongly on both ion implantation and laser processing co nditions. The growing of pseudomorphic epitaxial layers from group IV semiconductor alloys was successfully achieved by using the high energ y and large area beam (up to 1 J cm(-2) per pulse over 40 cm(2)) excim er laser developed by SOPRA for industrial applications. (C) 1998 Else vier Science S.A. All rights reserved.