Y. Horino, POSITIVE AND NEGATIVE LOW-ENERGY ION-BEAM DEPOSITION APPARATUS AND APPLICATIONS, Materials chemistry and physics, 54(1-3), 1998, pp. 224-228
A dual ion beam deposition apparatus was newly developed. The machine
consists of a positive ion beam line, a negative ion beam line and an
ultra-high vacuum deposition chamber. The machine can generate mass-an
alyzed very low energy ion beams with positive and negative charges at
the same time. Ion energy range covers 10 eV to 20 keV. It is possibl
e to deposit these ions directly on a substrate not only simultaneousl
y but also alternatively or independently. The machine has a wide poss
ibility to fabricate such as ultra-pure materials or nontraditional ma
terials. The machine is also useful to study fundamental processes of
ion beam deposition and/or ion solid surface interactions. Using the n
ew apparatus, isotopically pure carbon nitride (CxNy) films were fabri
cated by simultaneous deposition of C- and N+ ions. The ion energy was
varied from 50 to 400 eV. The films were analyzed by Rutherford backs
cattering spectroscopy (RBS), Fourier transform infrared spectroscopy
(FTIR) and Raman scattering. It was found that the maximum composition
ratio (N/C) was about 0.9, the film structure was amorphous carbon-li
ke and the amount of C-N triple bonds tended to decrease with decreasi
ng nitrogen ion energy. (C) 1998 Elsevier Science S.A. All rights rese
rved.