XRT MAPPING OF STRAIN-INDUCED BY 200 MEV AG14+ IONS IN SI(001)

Authors
SHARMA BB GUPTA SR KUMAR V TIWARI U SEN P MEHTA GK
Citation
Bb. Sharma et al., XRT MAPPING OF STRAIN-INDUCED BY 200 MEV AG14+ IONS IN SI(001), Materials chemistry and physics, 54(1-3), 1998, pp. 293-295
Citations number
4
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
54
Issue
1-3
Year of publication
1998
Pages
293 - 295
Database
ISI
SICI code
0254-0584(1998)54:1-3<293:XMOSB2>2.0.ZU;2-5
Abstract
The strain field generated by 200 MeV Ag14+ ions in Si (001) crystals has been investigated using X-ray topography. By choosing suitable dif fraction vectors it has been possible to explore the lattice distortio n in the inelastic and elastic loss regions separately. Stationary ref lection topographs gave two spatially separated images-one originating from the surface and the other from the region affected by elastic nu clear collisions close to the end of the ion range. The spatial separa tion of these two images is geometrically related to the depth of this elastic loss region. These topographic findings are compared with TRI M calculations. (C) 1998 Elsevier Science S.A. All rights reserved.