LUMINESCENCE BAND EVOLUTION IN SI IMPLANTED SIO2 LAYER UPON HIGH-TEMPERATURE ANNEALING

The SiO2 layer thermally grown on Si was implanted by 130 and 160 keV Si ions at liquid nitrogen temperature or room temperature to a dose o f 1 x 10(17) ions cm(-2). From the as-implanted samples, a visible pho toluminescence band centered around 2.0 eV was observed. After post an nealing at 1100 degrees C, another visible band in the range of 1.7 eV was detected. Interestingly, with increasing the annealing time, a bl ue shift of the peak energy and intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations is also discussed. (C) 1998 Elsevier Science S.A. All rights reserved.