LOW-TEMPERATURE GROWTH OF GAN AND INXGA1-XN FILMS ON GLASS SUBSTRATES

The growth of GaN and some InxGa1-xN films on conventional glass subst rates using RF plasma excitation is investigated. Highly c-axis orient ed films are obtained at low growth temperatures, and the crystallinit y depends on the growth rate as well as the growth temperature. The re sistivity of the films can be adjusted by controlling the growth rate, the RF power and the In content. The use of thin GaN buffer layers de creases the resistivity of the GaN films considerably. (C) 1998 Elsevi er Science B.V. All rights reserved.