HIGH-QUALITY INGAN MQW ON LOW-DISLOCATION-DENSITY GAN SUBSTRATE GROWNBY HYDRIDE VAPOR-PHASE EPITAXY

A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth . The InGaN MQWs fabricated on this thick GaN layer showed superior op tical properties compared with that on a sapphire substrate. ME diffus ion, induced by threading dislocations, was greatly suppressed for the LEDs on the HVPE-grown GaN layer. The results clearly indicate that t he HVPE-grown GaN substrate will be useful for achieving high-performa nce light-emitting devices. (C) 1998 Elsevier Science B.V. All rights reserved.