SUBMICRON FINE-STRUCTURE OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) SELECTIVE-AREA GROWTH (SAG) AND BURIED STRUCTURE BY EPITAXIAL LATERAL OVERGROWTH (ELO)

Sub-micron GaN dot structure has been realized by selective area growt h (SAG) using metalorganic vapor phase epitaxy (MOVPE). A truncated he xagonal sub-micron dot having a (0 0 0 1) plane and {1 (1) over bar 0 1} facet was obtained by SAG on SiO2 dot pattern fabricated by laser h olography. Morphology of the GaN lines depends on the crystal axis of the sob-micron line patterns. The lateral growth rate to the line patt ern along the [1 (1) over bar 0 0] direction is much faster than that along the [1 1 (2) over bar 0] direction. The GaN line structures coal esce easily on the sub-micron line patterns along the [1 (1) over bar 0 0] axis, resulting in buried structures of the SiO2 mask. (C) 1998 E lsevier Science B.V. All rights reserved.