ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF GAN-GA0.7AL0.3N QUANTUM-WELLS ALONG THE [0001]DIRECTION

We perform a careful study of the combined influence of the quantum we ll width and light polarization on the optical properties of strained GaN-AlGaN quantum wells oriented along the [0 0 0 1] direction. This i s made in the context of a six-band envelope function approach togethe r with utilization of the most recent experimental values of crystal f ield splitting, spin-orbit interaction and deformation potentials. We calculate the holes confinement, exciton binding energies and absorpti on spectra. We show that under sigma polarization conditions for chose n quantum wells, the only noticeable features can be attributed to enh anced A and B excitons; the C exciton process cannot be stimulated due to inter-valence band mixings. (C) 1998 Elsevier Science B.V. All rig hts reserved.