INTERFACE CONTROL OF GAN ALGAN QUANTUM-WELL STRUCTURES IN MOVPE GROWTH/

The interface control of GaN/AlGaN quantum well (QW) structures was st udied to realize high-quality QM's. Various growth interruption progra ms were carried out to obtain clear X-ray satellite peaks from the QW and to obtain a good surface morphology. From AFM observations, it was clarified that the growth interruption with flowing ammonia can decre ase the roughness of surfaces. Satellite peaks were observed by an X-r ay diffraction of samples with suitable growth interruptions. We also demonstrated 14 pair AlN/GaN multilayer reflectors on a sapphire subst rate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.