BLUE-LIGHT-EMITTING DIODES ON GAN SUBSTRATES, GROWTH AND CHARACTERIZATION

Light-emitting diodes have been grown on GaN single crystals using met alorganic vapor phase epitaxy. The homojunction devices were character ized by electroluminescence, photoluminescence and I-V measurements. I ntense, single-peak electroluminescence is obtained at 420 nm waveleng th, which is attributed to transitions in the p-type GaN underpinned b y photoluminescence measurements. The electrical and optical device pe rformance compares favorable to homotype pn-junctions grown on sapphir e using identical conditions for growth and characterization. The homo epitaxial light-emitting diodes are twice as bright as the heteroepita xial devices. (C) 1998 Elsevier Science B.V. All rights reserved.