DIRECT GROWTH OF GAN ON (0001) 6H-SIC BY LOW-PRESSURE MOVPE WITH A FLOW CHANNEL

Authors
KURIMOTO M SHIBATA M YAMAMOTO J TSUBAMOTO M HONDA T KAWANISHI H
Citation
M. Kurimoto et al., DIRECT GROWTH OF GAN ON (0001) 6H-SIC BY LOW-PRESSURE MOVPE WITH A FLOW CHANNEL, Journal of crystal growth, 190, 1998, pp. 189-192
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
190
Year of publication
1998
Pages
189 - 192
Database
ISI
SICI code
0022-0248(1998)190:<189:DGOGO(>2.0.ZU;2-V
Abstract
Direct growth of a GaN layer on (0 0 0 1) 6H-SiC by low-pressure MOVFE (LP-MOVPE) with a flow channel is investigated. In this study, we hav e reported that the surface morphologies of GaN epitaxial layer depend on the gas flow velocity. A high flow velocity is required for a two- dimensional(2D) growth. (C) 1998 Published by Elsevier Science B.V. Al l rights reserved.