EPITAXIAL-GROWTH OF GAN LAYERS WITH DOUBLE-BUFFER LAYERS

We report on metalorganic vapor phase epitaxy of GaN layers on newly d eveloped double-buffer layers (DBLs), The DBLs consist of two GaN laye rs deposited successively at different temperature T-1 and T-2. Photol uminescence and Raman scattering spectra exhibit that the epilayers ob tained in this fashion are higher in crystal quality than those grown on single-buffer lavers (SBLs). (C) 1998 Elsevier Science B.V. All rig hts reserved.