THE INFLUENCE OF THICKNESS ON PROPERTIES OF GAN BUFFER LAYER AND HEAVILY SI-DOPED GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buf fer layer has been proposed. Heavily Si-doped GaN layers have been gro wn using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room tem perature. (C) 1998 Published by Elsevier Science B.V. All rights reser ved.