MOVPE GROWTH OF HIGH-QUALITY III-NITRIDE MATERIAL FOR LIGHT-EMITTING DEVICE APPLICATIONS IN A MULTIWAFER SYSTEM

Processes for mass production of GaN and its related alloys, InGaN and AlGaN, have been optimized to achieve high device yield and low cost of ownership. Here we present some of the latest results obtained from AIX 2000HT Planetary Reactors(R) in a configuration of 7 x 2 '' which provides unique uniformity capabilities due to the twofold rotation o f the substrates. GaN single layers with background electron concentra tions below 5 x 10(16) cm(-3) and intended doping levels up to 10(18) cm(-3) p-type and 10(20) cm(-3) n-type with state of the art homogenei ties have been achieved. Thickness homogeneities have been shown to be better than 1% standard deviation on frill 2 '' wafers, while composi tion uniformity of ternary material is determined by room temperature photoluminescence mappings. Low-temperature photoluminescence and refl ectance spectra of single-layer GaN revealed free-exciton transitions (C) 1998 Elsevier Science B.V. All rights reserved.