CRYSTAL-GROWTH OF GAN AT RESONANCE POINT OF NITROGEN-ECR PLASMA

We present a novel technique to deposit GaN on c-Si heteroepitaxially by the use of a high-density active nitrogen species, which is generat ed at a resonance point of nitrogen-ECR plasma, where metal Ga is sput tered. A c-axis oriented GaN film was obtained by applying - 120 V to the target. The c-axis oriented GaN film deposited on an AIN film whic h is formed on c-Si(1 1 1) by the same method has a quality high enoug h to produce photoluminescence at 3.22 eV. (C) 1998 Elsevier Science B .V. All rights reserved.