GAN BALN HETEROSTRUCTURE GROWN ON A (0001)6H-SIC SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY/

A GaN/(B,Al)N heterostructure has been successfully grown on a (0 0 0 1)6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The X-ray diffraction (XRD) patterns of (0 0 0 2)GaN, (0 0 0 2)BAlN and (0 0 0 6)6H-SiC were observed from the GaN/BAlN heteros tructure. Photoluminescence spectra of GaN have also been observed at room temperature under 325 nm light excitation from GaN/BAlN, GaN/BN a nd thick GaN (3 mu m) grown on 6H-SiC. The full-width at half-maximum (FWHM) of the emission was nearly equal to 75 meV, the peak wavelength was located near the GaN's band edge. This indicates that the composi tion change region in the interface layers is small. (C) 1998 Elsevier Science B.V. All rights reserved.