GROWTH OF ALN FILMS BY MAGNETRON SPUTTERING

Uniform and smooth aluminum nitride (AlN) films have been grown on 2 i n (0 0 0 1) sapphire substrates by a magnetron sputtering method. The crystal quality was measured by four-crystal X-ray reflectance diffrac tion, SEM images, RHEED patterns and so on. The crystal quality was fo und to be best when the N-2/Ar flow ratio was increased to 16.7, Also a thickness uniformity of 0.23% was achieved on the 2 in substrate. (C ) 1998 Elsevier Science B.V. All rights reserved.