M. Hao et al., TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF INNAS ON GAAS GROWNBY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 190, 1998, pp. 481-484
The InNAs films have been grown on GaAs substrates by molecular beam e
pitaxy using an RF-activated plasma N source. The properties of these
films have been investigated by X-ray diffraction, transmission electr
on microscopy and energy dispersive X-ray spectroscopy mapping. Two ph
ases, InNAs and InAs, were found in the InNAs films. The InNAs phase c
onsists of pyramid-like islands connected to each other at the base an
d that most of the InAs grains grew between these InNAs islands in the
shape of an inverse pyramid. Both InNAs and InAs are cubic and have t
he same crystallographic direction as the substrates. (C) 1998 Elsevie
r Science B.V. All rights reserved.