TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF INNAS ON GAAS GROWNBY MOLECULAR-BEAM EPITAXY

The InNAs films have been grown on GaAs substrates by molecular beam e pitaxy using an RF-activated plasma N source. The properties of these films have been investigated by X-ray diffraction, transmission electr on microscopy and energy dispersive X-ray spectroscopy mapping. Two ph ases, InNAs and InAs, were found in the InNAs films. The InNAs phase c onsists of pyramid-like islands connected to each other at the base an d that most of the InAs grains grew between these InNAs islands in the shape of an inverse pyramid. Both InNAs and InAs are cubic and have t he same crystallographic direction as the substrates. (C) 1998 Elsevie r Science B.V. All rights reserved.