METALORGANIC MOLECULAR-BEAM EPITAXY OF GANAS ALLOYS ON (001)GAAS

GaNAs alloys grown on GaAs(0 0 1) substrates by metalorganic molecular beam epitaxy were investigated using X-ray diffraction and atomic for ce microscopy. The N composition in GaNAs alloys increases with decrea sing growth temperature and with increasing the pressure of the monome thylhydrazine precursor as the N source. An atomically flat GaNAs surf ace was observed for the dilute N compositions, while three-dimensiona l islands were observed for the higher N composition. Special features observed in the intermediate N composition are also discussed. (C) 19 98 Elsevier Science B.V. All rights reserved.