GROWTH CONDITION DEPENDENCE OF MG-DOPED GAN FILM GROWN BY HORIZONTAL ATMOSPHERIC MOCVD SYSTEM WITH 3 LAYERED LAMINAR-FLOW GAS INJECTION

We developed a novel atmospheric pressure horizontal MOCVD system (SR2 000) for the growth of III-nitride film. This system was designed for high-speed gas flow in order to suppress thermal convection and undesi rable reactant gas reaction. We have grown Mg-doped GaN films using SR 2000, We studied the bis-cyclopentadienyl magnesium (Cp2Mg) flow rate dependence and growth temperature (T-g) dependence of Mg-doped GaN As a result, we have obtained p-type GaN film with hole carrier density o f 8 x 10(17) cm(-3) with a mobility of 7.5 cm(2)/(V s) at the growth c ondition with Cp2Mg flow rate of 0.1 mu mol/min at T-g of 1025 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.