THERMAL IONIZATION-ENERGY OF SI AND MG IN ALGAN

Compositional dependence of activation energies of Mg and also Si in A lGaN was obtained by the Hall effect measurements at various temperatu res. Activation energies in AlGaN with AIN molar fraction less than 0. 4 were characterized both theoretically and experimentally. The experi mental result fits quite well for the Si donor with the hydrogen atom like model while that of Mg acceptor deviates downward from the model. In the p-type AlGaN, room temperature hole concentration of 1 x 10(17 ) cm(-3) was achieved in AlxGa1-xN with x = 0.33. (C) 1998 Elsevier Sc ience B.V. All rights reserved.