HIGH-CONCENTRATION HYDROGEN IN UNINTENTIONALLY DOPED GAN

Citation
Jp. Zhang et al., HIGH-CONCENTRATION HYDROGEN IN UNINTENTIONALLY DOPED GAN, Journal of crystal growth, 190, 1998, pp. 566-569
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
190
Year of publication
1998
Pages
566 - 569
Database
ISI
SICI code
0022-0248(1998)190:<566:HHIUDG>2.0.ZU;2-R
Abstract
We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is d etected. Accordingly, a broad but intense infrared absorption zone wit h a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one c andidate answering for background electrons in unintentionally doped G aN. (C) 1998 Elsevier Science B.V. All rights reserved.