STRAIN INVESTIGATIONS OF WURTZITE GAN BY RAMAN PHONON DIAGNOSTICS WITH PHOTOLUMINESCENCE SUPPLEMENT

Compressional and tensile biaxially strained GaN epilayers have been i nvestigated by micro-Raman scattering and X-ray diffraction. Strain de pendences have been observed also by photoluminescence measurements at higher temperatures. Additionally performed calculation of the strain dependence of the fundamental band gap supplements the investigations . (C) 1998 Elsevier Science B.V. All rights reserved.