EFFECT OF PIEZO ELECTRIC-FIELD ON EMISSION CHARACTERISTICS IN GAN ALGAN QUANTUM-WELLS/

The transition probability has been estimated in strained GaN/AlGaN qu antum wells (QWs) taking into account a carrier separation caused by t he piezo electric field. It is found that the decrease of transition p robability is not significant under high-level carrier injection for w eakly strained QWs as high as 0.2%. However, that decrease should be c onsidered in strongly strained QWs as about 1%. (C) 1998 Published by Elsevier Science B.V. All rights reserved.