EXCITON BINDING-ENERGIES AND BAND-GAPS IN GAN BULK CRYSTALS

Authors
REIMANN K STEUBE M FROHLICH D CLARKE SJ
Citation
K. Reimann et al., EXCITON BINDING-ENERGIES AND BAND-GAPS IN GAN BULK CRYSTALS, Journal of crystal growth, 190, 1998, pp. 652-655
Citations number
18
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
190
Year of publication
1998
Pages
652 - 655
Database
ISI
SICI code
0022-0248(1998)190:<652:EBABIG>2.0.ZU;2-3
Abstract
Photoluminescence and two-photon measurements were performed on hexago nal bulk GaN. From photoluminescence we have obtained the energies of free 1S excitons, from two-photon spectroscopy the energies of 2P exci tons. These results together allow an accurate determination of excito n binding energies and band gaps. (C) 1998 Elsevier Science B.V. All r ights reserved.