EFFECT OF METAL TYPE ON THE CONTACTS TO N-TYPE AND P-TYPE GAN

The electrical properties of various metal contacts to both n-type and p-type GaN were investigated to determine the underlying trend betwee n the metallic contact workfunction and the resultant Schottky barrier height between the said contact and the GaN material. It is concluded that, contrary to the expected trend, Fermi level pinning is not only present but is quite strong, with the effect being greater in the p-t ype material. The S factor (:the index of interface behaviour) was see n to be reduced from 1.00 to 0.21 and 0.01 for n and p-type GaN, respe ctively. (C) 1998 Elsevier Science B.V. All rights reserved.