WEAKLY LOCALIZED TRANSPORT IN MODULATION-DOPED GAN ALGAN HETEROSTRUCTURES/

Experimental data from Hall effect and magnetoresistance in the temper ature interval 2-250 K for modulation-doped AlGaN/GaN heterostructures indicate that two parallel conducting channels are present. Weak loca lization is present at the lowest temperatures. The transport paramete rs are understood in terms of the presence of strong potential fluctua tions at the AlGaN/GaN interface. (C) 1998 Published by Elsevier Scien ce B.V. All rights reserved.