DEVICE PERFORMANCE OF ULTRA-VIOLET EMITTING DIODES GROWN BY MBE

Ultra-violet emitting diodes Frith electroluminescence linewidths as n arrow as 8 nm have been grown by molecular beam epitaxy. Double-hetero structure pn- and homotype pin-diodes reveal single-peak emission at w avelengths around 371 nm. The dependence of the optical output power o n the forward current indicates light generation by diffusion current. Turn-on and reverse breakdown voltages are 4-5 V and above 30 V: resp ectively. For the first time, the metalorganic precursor MCp2Mg is emp loyed as p-dopant in nitride molecular beam epitaxy. (C) 1998 Elsevier Science B.V. All rights reserved.