EFFECTS OF HIGH ELECTRICAL STRESS ON GAN INGAN/ALGAN SINGLE-QUANTUM-WELL LIGHT-EMITTING-DIODES/

Authors
OSINSKI M BARTON DL PERLIN P LEE J
Citation
M. Osinski et al., EFFECTS OF HIGH ELECTRICAL STRESS ON GAN INGAN/ALGAN SINGLE-QUANTUM-WELL LIGHT-EMITTING-DIODES/, Journal of crystal growth, 190, 1998, pp. 808-811
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
190
Year of publication
1998
Pages
808 - 811
Database
ISI
SICI code
0022-0248(1998)190:<808:EOHESO>2.0.ZU;2-W
Abstract
We report on high-electrical-stress testing of Nichia GaN/InGaN/AlCaN single-quantum-well (SQW) light-emitting diodes. In contrast to our ea rlier experiments with double-heterostructure LEDs, the present SQW de vices have been improved to the point that the encapsulating plastic f ails under high electrical stress earlier than the diode itself. (C) 1 998 Published by Elsevier Science B.V. All rights reserved.