PYROLYSIS OF TERTIARYBUTYLAMINE ALONE AND WITH TRIMETHYLGALLIUM FOR GAN GROWTH

New nitrogen precursors that pyrolyze at low temperatures are desired to replace NH3, for the organometallic vapor phase epitaxial growth of GaN and, especially, GaInN. Tertiarybutylamine (TBAm) is a candidate having a high vapor pressure that is relatively safe compared with oth er potential N sources. In order to test the suitability of TBAm for t he growth of GaN, the pyrolysis was studied in He and H-2 ambients. Th e results of co-pyrolysis studies of TBAm plus trimethylgallium are al so reported. The pyrolysis reactions are relatively complex. In a hydr ogen ambient, the pyrolysis of TBAm alone proceeds mainly via producti on of t-butyl and NH2, radicals. Co-pyrolysis studies show that an add uct is formed at low temperatures, with elimination of CH4. At higher temperatures, the adduct dissociates and co-pyrolysis proceeds mainly as for the individual precursors. TMGa pyrolysis results in the format ion of Ga droplets. (C) 1998 Elsevier Science B.V. All rights reserved .