HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES ON GROWTH INTERRUPTED HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

We have investigated the behavior of group V atoms at growth interrupt ed heterointerfaces in an InP/AsH3-exposure/InP multilayer structure g rown by metalorganic vapor-phase epitaxy, whose interfaces are exposed to AsH3 gases, by means of high-resolution X-ray diffraction on an at omic scale and its simulation technique. It is found that primary fact ors for the incorporation of arsenic (As) atoms into InP layers consis ts of two modes, one is the incorporation into the grown layer due to the substitution of phosphorus (P) atoms by As atoms, and the other is that into the subsequently grown InP layer due to the incorporation f rom solid deposition of As atoms on the susceptor. In the processes, P atoms are substituted by As atoms not only in the monolayer of the su rface but also in the internal layer. It is also found that the depth where the As atoms are incorporated critically depends on the exposure time of the InP surface to the AsH3, ambiance. And As atoms which rep lace P atoms in the monolayer of the surface are easily evaporated in the PH3 ambiance, but it is difficult to remove the incorporated As at oms inside the grown InP layer even by a long PH3 purge time. (C) 1998 Elsevier Science B.V, All rights reserved.