GAN EPILAYERS GROWN AT HIGH GROWTH-RATE USING GAS-SOURCE MOLECULAR-BEAM EPITAXY METHOD

Authors
LI XB SUN DZ ZHANG JP KONG MY
Citation
Xb. Li et al., GAN EPILAYERS GROWN AT HIGH GROWTH-RATE USING GAS-SOURCE MOLECULAR-BEAM EPITAXY METHOD, Journal of crystal growth, 191(1-2), 1998, pp. 31-33
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
191
Issue
1-2
Year of publication
1998
Pages
31 - 33
Database
ISI
SICI code
0022-0248(1998)191:1-2<31:GEGAHG>2.0.ZU;2-R
Abstract
High-quality GaN epilayers have been grown by gas source molecular bea m epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtai ned at room temperature. Low-temperature photoluminescence spectrum wa s dominated by near-edge emission without deep-level related luminesce nce, indicative of high-quality epilayers. (C) 1998 Elsevier Science B .V. All rights reserved.