GROWTH AND CHARACTERIZATION OF INAS-RICH GAINASSB ALLOYS ON GASB SUBSTRATES BY MOCVD

MOCVD growth and characterization of InAs-rich GaInAsSb on GaSb substr ates was investigated. High quality mirror-like surfaces with a minimu m lattice mismatch of 0.4% was obtained. The surface of InAs-rich GaIn AsSb epilayer shows morphological features much different from that of GaSb-rich films. Solid compositions of InAs-rich films were dependent on growth temperature. InAs-rich GaInAsSb shows n-type conduction, wh ich is the opposite of GaSb-rich samples. A room temperature electron mobility of 5000 cm(2)/V.s with electron concentration of 3.6 x 10(17) cm(-3) was obtained. (C) 1998 Elsevier Science B.V. All rights reserv ed.