Cj. Lu et al., THE GROWTH AND PHASE-TRANSITIONS OF EPITAXIAL PB(ZR0.95TI0.05)O-3 THIN-FILMS PREPARED BY SPUTTER-DEPOSITION COMBINED WITH POSTANNEALING ON SRTIO3(100), Journal of crystal growth, 191(1-2), 1998, pp. 113-118
Epitaxial Pb(Zr0.95Ti0.05)O-3 thin films of an orthorhombic perovskite
structure have been grown on SrTiO3(100) substrates using radio-frequ
ency sputter deposition from a stoichiometric ceramic target. The film
s were deposited without substrate heating and then annealed at 700 de
grees C in a conventional furnace. The single-crystal nature of the fi
lms was confirmed by the cross-section scanning electron microscopy, X
-ray diffraction (XRD) including theta-2 theta scan and phi-scan, as w
ell as reflection high energy electron diffraction. The films are a mi
xture of a- and c-domains. The experiments of high-temperature XRD ind
icated that the Curie point of the films is close to that for the stoi
chiometric ceramic target. On heating, however, the orthorhombic-rhomb
ohedral phase transition in the epitaxial films occurred at about 190
degrees C, far higher than the corresponding transition temperature (5
1.6 degrees C) for its bulk counterpart. (C) 1998 Elsevier Science B.V
. All rights reserved.