THE EFFECT OF ORIENTATION DEVIATION ON PATTERN DISTORTION IN EPITAXIAL BURIED LAYER ON P-TYPE [100]SILICON SUBSTRATE

The orientation deviation is the main factor influencing pattern disto rtion in the epitaxial buried layer on a p-type < 1 0 0 > silicon subs trate. It is pointed out that a better pattern can be obtained by devi ating the orientation of the p-type < 1 0 0 > wafer 2-3 degrees from < 1 0 0 > axis toward the nearest < 1 1 0 > axis. This is somewhat diff erent from the commonly adopted epitaxial growth conditions. In this p aper, we have discussed the reason for the formation of a distorted pa ttern based on its micro-mechanism and growth dynamics. (C) 1998 Elsev ier Science B.V. All rights reserved.