CARBON NITRIDE THIN-FILM GROWTH BY PULSED-LASER DEPOSITION

Thin films of carbon nitride were deposited using pulsed laser deposit ion techniques both with and without an atomic nitrogen source. In sit u characterization of chemical composition and atomic bending were stu died using scanning Auger, x-ray photoelectron spectroscopy, and elect ron energy-loss spectroscopy. The influence of growth parameters inclu ding substrate temperature, substrate bias, nitrogen partial pressure, and atomic nitrogen on the film composition were studied. Nitrogen co ntent x for CNx films ranged from 0.3 to 0.6 (25-40 at. % nitrogen). T ime-of-flight mass spectrometry of the species ejecting from a nitride d carbon target was performed. Neutrals of CN4 and C3N4 clusters and p ositive ions of CxNy clusters were observed in addition to carbon neut ral and positive ion clusters. (C) 1998 American Vacuum Society. [S073 4-2101(98)07804-X].