My. Chen et Pt. Murray, CARBON NITRIDE THIN-FILM GROWTH BY PULSED-LASER DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2093-2098
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Thin films of carbon nitride were deposited using pulsed laser deposit
ion techniques both with and without an atomic nitrogen source. In sit
u characterization of chemical composition and atomic bending were stu
died using scanning Auger, x-ray photoelectron spectroscopy, and elect
ron energy-loss spectroscopy. The influence of growth parameters inclu
ding substrate temperature, substrate bias, nitrogen partial pressure,
and atomic nitrogen on the film composition were studied. Nitrogen co
ntent x for CNx films ranged from 0.3 to 0.6 (25-40 at. % nitrogen). T
ime-of-flight mass spectrometry of the species ejecting from a nitride
d carbon target was performed. Neutrals of CN4 and C3N4 clusters and p
ositive ions of CxNy clusters were observed in addition to carbon neut
ral and positive ion clusters. (C) 1998 American Vacuum Society. [S073
4-2101(98)07804-X].