SYNCHROTRON-RADIATION-INDUCED SIC FORMATION ON SI SUBSTRATE EMPLOYINGMETHANOL AND H RADICAL

A novel system for a material processing was developed using synchrotr on radiation (SR) induced reaction. This system consisted of a SR, a r adical source with a microwave plasma for an injection of radicals, an d a CO2 laser for heating a substrate. Film formation was performed us ing this system. CH4 and CH3OH were used as a source gas and H radical s were injected by the radical source during film formation. The synth esized films were characterized by an atomic force microscope, a micro Auger electron spectroscopy, and a Fourier transform infrared absorpt ion spectroscopy. CH3OH gas was found to be dissociated by an irradiat ion of SR. When CH3OH gas was employed without Il radical injection, a carbon film was formed only in the area of SR irradiation on Si subst rate. Using SR irradiation employing CH3OH gas with H radical injectio n, nuclei of silicon carbide (SiC) were successfully formed in the are a of SR irradiation on Si substrate at a temperature of 800 degrees C. The mechanism of SiC nucleation induced by SR irradiation is discusse d. (C) 1998 American Vacuum Society. [S0734-2101 (98)01504-8].