QUANTITATIVE MEASUREMENT OF NODULE FORMATION IN W-TI SPUTTERING

Authors
Citation
Cf. Lo et D. Draper, QUANTITATIVE MEASUREMENT OF NODULE FORMATION IN W-TI SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2418-2422
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
16
Issue
4
Year of publication
1998
Pages
2418 - 2422
Database
ISI
SICI code
0734-2101(1998)16:4<2418:QMONFI>2.0.ZU;2-F
Abstract
Titanium-tungsten alloys have been used as a diffusion barrier between Si substrates and Al-based interconnect metallization for more than t wo decades. Due to the increasing complexity of integrated circuits, t he primary concern has been focused on the reduction of particles duri ng sputtering. Flaking of the redeposited nodules on the target surfac e was suspected to be one of the particulate sources. To control the n odule formation, a fundamental knowledge of the nodule formation mecha nism is required. In this study, the influence of target properties an d sputtering parameters on nodule formation in sputtering targets of t ungsten with 10 and 15 wt % titanium was investigated. The amount and life of the nodules as a function of target life was determined. A par abolic relation showed a saturated nodule size with increased sputteri ng life. The existence of fractured nodules confirms the nodules to be the particulate source. (C) 1998 American Vacuum Society. [S0734-2101 (98)09604-3].