PBTIO3 BUTTER LAYER EFFECTS ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF PB(ZR, TI)O-3 THIN-FILMS GROWN BY SPUTTERING ON SILICON SUBSTRATES

Pb(Zr, Ti)O-3 (PZT) thin films have been grown on Si/SiO2 and Si/SiO2/ Ti/Pt substrates by rf magnetron sputtering and the effects of PbTiO3 (PT) buffer layers to the structural and electrical properties of PZT films were studied. The PT buffer layers were grown in situ (without p ostannealing) with thicknesses ranging from 100 to 1200 Angstrom. The PT layer orientation can be adjusted by the deposition temperature. Th e PZT films with a composition near the morphotropic phase (54/46) wer e deposited at room temperature followed by a conventional postanneali ng treatment. The disappearance of cracks in PZT films deposited on Si /SiO2/PT substrates indicates the role of the buffer layer as a stress absorber. By using a PT buffer layer it was possible to control the P ZT films' orientation. Polycrystalline PZT films without a buffer laye r changed to highly (100) or (111) oriented films, depending on the pr eferred orientation of the buffer layer. The influence of the buffer l ayer thickness and the PZT films' orientation on the electrical proper ties was also investigated. (C) 1998 American Vacuum Society. [S0734-2 101(98)11004-7].