ELECTRICAL-PROPERTIES OF (PB,LA)TIO3 THIN-FILMS DEPOSITED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING SOLID DELIVERY SYSTEM

(Pb,La)TiO3 (PLT) thin films were deposited on various substrates by m etal-organic chemical vapor deposition technique using a solid deliver y system. A mixture of metal-organic precursors with wide range of La dopant concentration was prepared to investigate the effects of La dop ing concentration on the structural and dielectric properties of PLT t hin films. As La concentration increases, the crystal structure of PLT thin films changed from tetragonal to pseudocubic and their dielectri c constant increased. An annealing process after fabrication of PLT th in film capacitor improved ferroelectric properties. Pt top electrode was more effective in the improvement than RuO2 top electrode in rapid thermal annealing process using halogen lamp heater. (C) 1998 America n Vacuum Society. [S0734-2101(98)11704-9].