Jp. Doyle et al., COPPER DIFFUSION IN AMORPHOUS-GERMANIUM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2604-2607
Citations number
18
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The diffusion coefficient of copper in amorphous germanium is estimate
d to be larger than 3 x 10(-11) cm(2) s(-1) and the solubility to be s
imilar to 7 x 10(18) cm(-3) at 200 degrees C as determined from second
ary mass spectrometry. The observed solubility Limit is more than eigh
t orders of magnitude greater than that in crystalline germanium and t
he enthalpy of a solution of copper in amorphous germanium is estimate
d to be as low as 0.05 eV in the range of 20-200 degrees C. Copper is
observed to diffuse more readily in amorphous germanium than in amorph
ous silicon, with an activation enthalpy as low as similar to 0.5 eV i
n the range of 20-200 degrees C. Interstitial diffusion is assumed to
prevail and the trapping enthalpy of defects retarding the motion is f
ound to be significantly lower in amorphous germanium (0.25 +/- 0.15 e
V) compared to that in amorphous silicon (similar to 0.8 eV). (C) 1998
American Vacuum Society. [S0734-2101(98)00204-8].