HYDROGEN PASSIVATION AT THE AL H-SI(111)-(1X1) INTERFACE/

Authors
GRUPP C TALEBIBRAHIMI A
Citation
C. Grupp et A. Talebibrahimi, HYDROGEN PASSIVATION AT THE AL H-SI(111)-(1X1) INTERFACE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2683-2686
Citations number
27
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
16
Issue
4
Year of publication
1998
Pages
2683 - 2686
Database
ISI
SICI code
0734-2101(1998)16:4<2683:HPATAH>2.0.ZU;2-1
Abstract
A direct comparative study of the interfaces AL/H:Si(111)-(1x1) and Al /Si(111)-(7x7) by means of high-resolution photoelectron spectroscopy and Auger spectroscopy reveals large differences for aluminum coverage s below Theta-5 ML. Hydrogen termination suppresses the formation of i nterfacial AlSi and promotes island growth. The Schottky barrier forma tion is delayed compared to the Al/Si(111)-(7x7) interface. For high c overages the Schottky barrier is the same for both interfaces. (C) 199 8 Americnn Vacuum Society. [S0734-2101(98)06904-8].