COMPLETE MONTE-CARLO RF ANALYSIS OF REAL SHORT-CHANNEL COMPOUND FETS

A comprehensive RF analysis technique based on ensemble Monte Carlo (E MC) simulation of compound FET's with realistic device geometry is pre sented. Y-parameters are obtained through Fourier transformation of th e EMC transients in response to small changes in the terminal voltages . The terminal currents are statistically enhanced and filtered to all ow for reliable y-parameters extraction, Improved analytic procedure f or extracting the intrinsic device small-signal circuit components is described. As a result, stable y-parameters and reliable circuit compo nents can be extracted for the whole range of device operation voltage s. Parasitic components like contact and gate resistances are included in the y-parameters at a post processing stage to facilitate the fore cast of the performance figures of merit of real devices. The develope d RF technique has been applied in the EMC simulation of pseudomorphic HEMT's (pHEMT's) fabricated at the Glasgow Nanoelectronics Research C enter. Good agreement has been achieved between the simulated and meas ured small signal circuit components and performance figures of merit.