EFFECT OF EMITTER LAYER CONCENTRATION ON THE PERFORMANCE OF GAAS P(-IHOMOJUNCTION FAR-INFRARED DETECTORS - A COMPARISON OF THEORY AND EXPERIMENT())

Authors
SHEN WZ PERERA AGU FRANCOMBE MH LIU HC BUCHANAN M SCHAFF WJ
Citation
Wz. Shen et al., EFFECT OF EMITTER LAYER CONCENTRATION ON THE PERFORMANCE OF GAAS P(-IHOMOJUNCTION FAR-INFRARED DETECTORS - A COMPARISON OF THEORY AND EXPERIMENT()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1671-1677
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
8
Year of publication
1998
Pages
1671 - 1677
Database
ISI
SICI code
0018-9383(1998)45:8<1671:EOELCO>2.0.ZU;2-J
Abstract
The performance of GaAs multilayer (p(+)-i-p(+)-i-...) homojunction in terfacial workfunction internal photoemission (HIWIP) far-infrared (FI R) detectors as a function of emitter layer (p(+)) concentration Is re ported. The dark current characteristics have been investigated and co mpared with a model which includes the space charge, tunneling, and mu ltiple-image-force effects. The experimentally determined detector cut off wavelength is found to be in reasonable agreement with the high de nsity (HD) theory. The detector responsivity follows well the quantum efficiency predicted by scaling the free carrier absorption coefficien t linearly with the doping concentration. All these comparisons are ne cessary to design and optimize GaAs HIWIP FIR detectors.