A SIMPLE METHOD FOR THE THERMAL-RESISTANCE MEASUREMENT OF ALGAAS GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
BOVOLON N BAUREIS P MULLER JE ZWICKNAGL P SCHULTHEIS R ZANONI E
Citation
N. Bovolon et al., A SIMPLE METHOD FOR THE THERMAL-RESISTANCE MEASUREMENT OF ALGAAS GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1846-1848
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
8
Year of publication
1998
Pages
1846 - 1848
Database
ISI
SICI code
0018-9383(1998)45:8<1846:ASMFTT>2.0.ZU;2-S
Abstract
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The keg a dvantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.