ACCURATE EXTRACTION OF REVERSE LEAKAGE CURRENT COMPONENTS OF SHALLOW SILICIDED P(-N JUNCTION FOR QUARTER-MICRON AND SUB-QUARTER-MICRON MOSFETS())

Areal, peripheral and corner leakage current densities are extracted f rom measured data of area, perimeter and corner intensive p(+)-n junct ions fabricated with the quarter-micron CMOS technology using shallow trench isolation and titanium salicide, It is shown that the magnitude of corner leakage component is more than two orders of magnitude larg er than those of areal and peripheral leakage components in silicided p(+)-n junctions at all temperature. The corner leakage component will be more and more important as the active area gets smaller in sub-qua rter-micron devices.