REEVALUATION OF THE F(T)BV(CEO) LIMIT ON SI BIPOLAR-TRANSISTORS

Authors
NG KK FREI MR KING CA
Citation
Kk. Ng et al., REEVALUATION OF THE F(T)BV(CEO) LIMIT ON SI BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1854-1855
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
8
Year of publication
1998
Pages
1854 - 1855
Database
ISI
SICI code
0018-9383(1998)45:8<1854:ROTFLO>2.0.ZU;2-1
Abstract
The Johnson limit [1] predicts that due to fundamental material limita tions, the f(t)BV(ceo) product for Si bipolar transistors cannot excee d 200 GHz-V. Since this limit ignores many practical components, it sh ould not be achievable experimentally. In light of the fact that resul ts reaching this limit have been reported, we have reevaluated such fu ndamental limits, and have found that this number should be much highe r.