A NEW CHARACTERIZATION METHOD FOR HOT-CARRIER DEGRADATION IN DMOS TRANSISTORS

Authors
PIERACCI A RICCO B
Citation
A. Pieracci et B. Ricco, A NEW CHARACTERIZATION METHOD FOR HOT-CARRIER DEGRADATION IN DMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1855-1858
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
8
Year of publication
1998
Pages
1855 - 1858
Database
ISI
SICI code
0018-9383(1998)45:8<1855:ANCMFH>2.0.ZU;2-6
Abstract
This paper presents an original method based on capacitance measuremen ts, that is able to localize and estimate hot-electron-induced oxide c harge in double-diffused MOS (DMOS) transistors. The method is validat ed by means of two-dimensional (2-D) numerical simulation. Preliminary results obtained with state-of-the-art devices are presented as examp le of application.