LIGHT-EMISSION FROM INDIVIDUAL INAS GAAS SELF-ASSEMBLED QUANTUM DOTS EXCITED BY TUNNELING CURRENT INJECTION/

Authors
YAMANAKA K ISHIDA S SUZUKI K HAYASHI H WATABE H ARAKAWA Y
Citation
K. Yamanaka et al., LIGHT-EMISSION FROM INDIVIDUAL INAS GAAS SELF-ASSEMBLED QUANTUM DOTS EXCITED BY TUNNELING CURRENT INJECTION/, Solid-state electronics, 42(7-8), 1998, pp. 1079-1082
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1079 - 1082
Database
ISI
SICI code
0038-1101(1998)42:7-8<1079:LFIIGS>2.0.ZU;2-0
Abstract
Emission from individual InAs quantum dots by tunneling current inject ion using a scanning tunneling microscope (STM) is reported. By scanni ng the STM tip above the self-assembled InAs quantum dot structures, a spatially resolved scanning tunneling luminescence (STL) image was me asured, which contained some peaks originating from InAs quantum dots. The width of these peaks are of the same size as the average dot size , suggesting that the resolution of this method is much higher than 20 nm. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.